This newly and thoroughly revised edition of the 1988 Artech House classic offers you a comprehensive, up-to-date treatment of nonlinear microwave and RF circuits. It gives you a current, in-depth understanding of the theory of nonlinear circuit analysis with a focus on Volterra-series and harmonic-balance methods. You get practical guidance in designing nonlinear circuits and modeling solid-state devices for nonlinear circuit analysis by computer. Moreover, you learn how characteristics of such models affect the analysis of these circuits. Critical new topics include microwave heterojunction bipolar transistors (HBTs), heterojunction FETs (HEMTs), silicon MOSFETs, modern IC design approaches, new methods of harmonic-balance analysis, multitone analysis methods, Fourier methods for multitone problems, and artificial frequency mapping. What's more, the second edition has been updated to include discussions on nonlinear analysis of oscillators and design issues relating to RF and wireless technology. More than 120 illustrations support key topics throughout the book.
It’s Back! New chapters, examples, and insights; all infused with the timeless concepts and theories that have helped RF engineers for the past 25 years! RF circuit design is now more important than ever as we find ourselves in an increasingly wireless world. Radio is the backbone of today’s wireless industry with protocols such as Bluetooth, Wi-Fi, WiMax, and ZigBee. Most, if not all, mobile devices have an RF component and this book tells the reader how to design and integrate that component in a very practical fashion. This book has been updated to include today's integrated circuit (IC) and system-level design issues as well as keeping its classic "wire lead" material. Design Concepts and Tools Include •The Basics: Wires, Resistors, Capacitors, Inductors •Resonant Circuits: Resonance, Insertion Loss •Filter Design: High-pass, Bandpass, Band-rejection •Impedance Matching: The L Network, Smith Charts, Software Design Tools •Transistors: Materials, Y Parameters, S Parameters •Small Signal RF Amplifier: Transistor Biasing, Y Parameters, S Parameters •RF Power Amplifiers: Automatic Shutdown Circuitry , Broadband Transformers, Practical Winding Hints •RF Front-End: Architectures, Software-Defined Radios, ADC’s Effects •RF Design Tools: Languages, Flow, Modeling Check out this book’s companion Web site at: http://www.elsevierdirect.com/companion.jsp?ISBN=9780750685184 for full-color Smith Charts and extra content! *Completely updated but still contains its classic timeless information *Two NEW chapters on RF Front-End Design and RF Design Tools *Not overly math intensive, perfect for the working RF and digital professional that need to build analog-RF-Wireless circuits
A detailed, applications-oriented description of a measurement technique that characterizes a high-frequency probe assembly for integrated circuit measurements is given along with the procedure that extracts the parasitic effects of the probe assembly from measurements made at the input connectors of the probe assembly. The scattering parameters of an integrated-circuit device or transistor can now be extracted and accurately determined up to 2 GHz at the wafer stage of assembly. This represents a significant advance over conventional techniques that enable only dc parameters to be measured. Measurement results using this technique are given along with the precision of values obtained as well as the nature of the measurement bias introduced by the probe assembly.
Introduction to RF Power Amplifier Design and Simulation fills a gap in the existing literature by providing step-by-step guidance for the design of radio frequency (RF) power amplifiers, from analytical formulation to simulation, implementation, and measurement. Featuring numerous illustrations and examples of real-world engineering applications, this book: Gives an overview of intermodulation and elaborates on the difference between linear and nonlinear amplifiers Describes the high-frequency model and transient characteristics of metal–oxide–semiconductor field-effect transistors Details active device modeling techniques for transistors and parasitic extraction methods for active devices Explores network and scattering parameters, resonators, matching networks, and tools such as the Smith chart Covers power-sensing devices including four-port directional couplers and new types of reflectometers Presents RF filter designs for power amplifiers as well as application examples of special filter types Demonstrates the use of computer-aided design (CAD) tools, implementing systematic design techniques Blending theory with practice, Introduction to RF Power Amplifier Design and Simulation supplies engineers, researchers, and RF/microwave engineering students with a valuable resource for the creation of efficient, better-performing, low-profile, high-power RF amplifiers.